AWhat changed
Used a silicon oxide insulated gate to control conduction at a semiconductor surface, establishing a working device path that could later be developed into MOS integrated circuits.
Scientific scope
Used a silicon oxide insulated gate to control conduction at a semiconductor surface, establishing a working device path that could later be developed into MOS integrated circuits. Scope limitation: The year identifies the demonstration milestone; fabrication is reported in 1959. The early device, surface-passivation research, later CMOS, commercial MOS circuits and modern chips are distinct contributions. The named inventors are not a complete inventory of subsequent engineering teams.
Evidence
Assessment uses the catalogue-linked source evidence for the stated contribution. The year identifies the demonstration milestone; fabrication is reported in 1959. The early device, surface-passivation research, later CMOS, commercial MOS circuits and modern chips are distinct contributions. The named inventors are not a complete inventory of subsequent engineering teams.
Contributors
- M. M. Atalla · SCIENCE: Named source contributor; exact labor shares are not measured.
- Dawon Kahng · SCIENCE: Named source contributor; exact labor shares are not measured.
Provisional WRS assessment, edition 2026-10-16.1. Independent expert calibration is pending. This grade does not certify correctness or assign ownership.
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