What is recorded here?
Used a silicon oxide insulated gate to control conduction at a semiconductor surface, establishing a working device path that could later be developed into MOS integrated circuits.
Source-linked catalogue note. A detailed explanatory guide has not yet been prepared for this entry.
Scientific scope
The year identifies the demonstration milestone; fabrication is reported in 1959. The early device, surface-passivation research, later CMOS, commercial MOS circuits and modern chips are distinct contributions. The named inventors are not a complete inventory of subsequent engineering teams.
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People and systems
M. M. Atalla; Dawon Kahng
Attribution names the scoped source contributors, not their whole careers or all later applications.
Research locations and affiliations
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Documented countries / regions: United States
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English catalogue narrative
Atalla and Kahng: a working MOS field-effect transistor
Used a silicon oxide insulated gate to control conduction at a semiconductor surface, establishing a working device path that could later be developed into MOS integrated circuits.
Scientific scope
The year identifies the demonstration milestone; fabrication is reported in 1959. The early device, surface-passivation research, later CMOS, commercial MOS circuits and modern chips are distinct contributions. The named inventors are not a complete inventory of subsequent engineering teams.
Reading status
This is a source-linked WRS catalogue note. A full explanatory guide and independent scientific reconstruction have not been completed for this entry. Read the identified original work for its complete narrative and arguments.
People and systems
M. M. Atalla; Dawon Kahng
Attribution names the scoped source contributors, not their whole careers or all later applications.