What is recorded here?
Parameswaran, Turner, Arovas and Vishwanath extended filling constraints on insulating states to non-symmorphic crystals, whose symmetries combine point operations with fractional translations. A flux-threading argument shows how a conserved charge can change screw or glide quantum numbers even when the filling per cell is an integer. This rules out a unique symmetry-preserving trivial insulator at selected integer fillings, sharpening the usual fractional-filling obstruction. The paper connects the constraint to band connectivity and gives spin and boson applications.
Source-linked catalogue note. A detailed explanatory guide has not yet been prepared for this entry.
Scientific scope
The argument assumes conserved U(1) charge, exact crystal symmetry and the stated insulating flux-response framework. Its electronic treatment neglects spin-orbit coupling and counts filling per spin component. It provides necessary conditions for trivial insulators, not a construction or a diagnosis of the phase of every listed material. A gapped symmetric state at an obstructed filling is interpreted as topologically ordered; symmetry breaking and gaplessness are alternatives. The simplified flux path inherits energy-control arguments rather than proving a complete new uniform bound in this paper.
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People and systems
Siddharth A. Parameswaran; Ari M. Turner; Daniel P. Arovas; Ashvin Vishwanath
These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.
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English catalogue narrative
Non-symmorphic crystal symmetries obstruct trivial insulators at selected integer fillings
Parameswaran, Turner, Arovas and Vishwanath extended filling constraints on insulating states to non-symmorphic crystals, whose symmetries combine point operations with fractional translations. A flux-threading argument shows how a conserved charge can change screw or glide quantum numbers even when the filling per cell is an integer. This rules out a unique symmetry-preserving trivial insulator at selected integer fillings, sharpening the usual fractional-filling obstruction. The paper connects the constraint to band connectivity and gives spin and boson applications.
Scientific scope
The argument assumes conserved U(1) charge, exact crystal symmetry and the stated insulating flux-response framework. Its electronic treatment neglects spin-orbit coupling and counts filling per spin component. It provides necessary conditions for trivial insulators, not a construction or a diagnosis of the phase of every listed material. A gapped symmetric state at an obstructed filling is interpreted as topologically ordered; symmetry breaking and gaplessness are alternatives. The simplified flux path inherits energy-control arguments rather than proving a complete new uniform bound in this paper.
Reading status
This is a source-linked WRS catalogue note. A full explanatory guide and independent scientific reconstruction have not been completed for this entry. Read the identified original work for its complete narrative and arguments.
People and systems
Siddharth A. Parameswaran; Ari M. Turner; Daniel P. Arovas; Ashvin Vishwanath
These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.