What is recorded here?
Kang and colleagues combined local and nonlocal transport with penetration-capacitance measurements in twisted bilayer WSe2. Near hole fillings 2 and 4, local resistances approached h/(2e²) and h/(4e²), while nonlocal responses and bulk incompressibility supported one and two pairs of helical edge channels. The transport changed much more strongly under in-plane than out-of-plane magnetic fields, consistent with approximate spin-conservation protection of a double quantum spin-Hall phase at filling 4.
Source-linked catalogue note. A detailed explanatory guide has not yet been prepared for this entry.
Scientific scope
The evidence is from the February 2024 preprint and selected uniform regions of finite devices. Local resistance exceeded ideal values by about 10–15 percent, and nonlocal resistance was substantially below ideal edge-only predictions. Bulk capacitance and transport came from different devices. Spin Chern numbers and protection are interpreted using a continuum model and approximate Ising spin conservation; exact spin-resolved quantization, arbitrary-disorder robustness and dissipation-free device operation were not established.
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People and systems
Kaifei Kang; Yichen Qiu; Kenji Watanabe; Takashi Taniguchi; Jie Shan; Kin Fai Mak
These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.
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English catalogue narrative
Double quantum spin-Hall transport in twisted bilayer WSe2
Kang and colleagues combined local and nonlocal transport with penetration-capacitance measurements in twisted bilayer WSe2. Near hole fillings 2 and 4, local resistances approached h/(2e²) and h/(4e²), while nonlocal responses and bulk incompressibility supported one and two pairs of helical edge channels. The transport changed much more strongly under in-plane than out-of-plane magnetic fields, consistent with approximate spin-conservation protection of a double quantum spin-Hall phase at filling 4.
Scientific scope
The evidence is from the February 2024 preprint and selected uniform regions of finite devices. Local resistance exceeded ideal values by about 10–15 percent, and nonlocal resistance was substantially below ideal edge-only predictions. Bulk capacitance and transport came from different devices. Spin Chern numbers and protection are interpreted using a continuum model and approximate Ising spin conservation; exact spin-resolved quantization, arbitrary-disorder robustness and dissipation-free device operation were not established.
Reading status
This is a source-linked WRS catalogue note. A full explanatory guide and independent scientific reconstruction have not been completed for this entry. Read the identified original work for its complete narrative and arguments.
People and systems
Kaifei Kang; Yichen Qiu; Kenji Watanabe; Takashi Taniguchi; Jie Shan; Kin Fai Mak
These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.