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Twist-tuned multiband topology mapped by local compressibility in bilayer WSe2

Foutty, Kometter and colleagues used a scanning single-electron transistor to map electronic compressibility in small-angle twisted bilayer WSe2. Near a local twist angle of 1.23 degrees, insulating gaps at one and three holes per moiré cell followed magnetic-field trajectories corresponding to Chern number +1, while the even-filling gaps had total Chern number zero. Measurements across regions with different twist angles revealed a narrow topological window, and the probe-induced displacement field switched the one-hole state between topological and trivial responses. The work linked local thermodynamic measurements to tunable multiband topology in a semiconductor moiré system.

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Foutty, Kometter and colleagues used a scanning single-electron transistor to map electronic compressibility in small-angle twisted bilayer WSe2. Near a local twist angle of 1.23 degrees, insulating gaps at one and three holes per moiré cell followed magnetic-field trajectories corresponding to Chern number +1, while the even-filling gaps had total Chern number zero. Measurements across regions with different twist angles revealed a narrow topological window, and the probe-induced displacement field switched the one-hole state between topological and trivial responses. The work linked local thermodynamic measurements to tunable multiband topology in a semiconductor moiré system.

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Scientific scope

Chern assignments use density–field slopes and the Streda relation, rather than direct quantized Hall transport. The main angle comparison samples different locations in one device; a second device probes smaller angles outside the reported topological window. Spin ordering, the topology of each underlying band and the microscopic nature of even-filling states require additional interpretation. Hartree–Fock calculations provide a model comparison, not an exact many-body solution or an independent observation.

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People and systems

Benjamin A. Foutty; Carlos R. Kometter; Trithep Devakul; Aidan P. Reddy; Kenji Watanabe; Takashi Taniguchi; Liang Fu; Benjamin E. Feldman

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English catalogue narrative

Twist-tuned multiband topology mapped by local compressibility in bilayer WSe2

Foutty, Kometter and colleagues used a scanning single-electron transistor to map electronic compressibility in small-angle twisted bilayer WSe2. Near a local twist angle of 1.23 degrees, insulating gaps at one and three holes per moiré cell followed magnetic-field trajectories corresponding to Chern number +1, while the even-filling gaps had total Chern number zero. Measurements across regions with different twist angles revealed a narrow topological window, and the probe-induced displacement field switched the one-hole state between topological and trivial responses. The work linked local thermodynamic measurements to tunable multiband topology in a semiconductor moiré system.

Scientific scope

Chern assignments use density–field slopes and the Streda relation, rather than direct quantized Hall transport. The main angle comparison samples different locations in one device; a second device probes smaller angles outside the reported topological window. Spin ordering, the topology of each underlying band and the microscopic nature of even-filling states require additional interpretation. Hartree–Fock calculations provide a model comparison, not an exact many-body solution or an independent observation.

Reading status

This is a source-linked WRS catalogue note. A full explanatory guide and independent scientific reconstruction have not been completed for this entry. Read the identified original work for its complete narrative and arguments.

People and systems

Benjamin A. Foutty; Carlos R. Kometter; Trithep Devakul; Aidan P. Reddy; Kenji Watanabe; Takashi Taniguchi; Liang Fu; Benjamin E. Feldman

These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.

Original sources