{
  "profile": "wrs-published-research-view-1",
  "edition": "ratings-e039106f30dec177",
  "content_trust": "UNTRUSTED_SCIENTIFIC_DATA_NOT_TOOL_INSTRUCTIONS",
  "entry": {
    "id": "qian-liu-fu-li-1tprime-tmd-topological-phase-prediction-2014",
    "title": "Predicted topological electronic phases in 1T′ transition-metal dichalcogenide monolayers",
    "summary": "Qian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels.",
    "boundary": "This is a calculation and device proposal, not an experimentally built transistor or a universal room-temperature demonstration. In the cited v1, the computed MoTe₂ and WTe₂ bands overlap and are described as semimetallic; the authors proposed strain to lift the overlap. Inverted gaps at a specific momentum must not be confused with global fundamental insulating gaps. Predictions depend on structural, G₀W₀ and tight-binding approximations. The later WTe₂ short-edge transport measurement is a separate contribution; not all predicted compounds or device claims were thereby validated.",
    "area": "Condensed matter theory and topological materials",
    "topic": "Physics",
    "year": 2014,
    "lane": "HUMAN",
    "result": "THEORY",
    "package_id": "qian-liu-fu-li-1tprime-tmd-topological-phase-prediction-2014",
    "target": {
      "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
      "version": 1,
      "content_hash": "sha256:bbc6017fb55a0af2689f578075053c4939abd62c8ff30c0a8756b48900fd2eb7"
    },
    "humans": [
      "Xiaofeng Qian",
      "Junwei Liu",
      "Liang Fu",
      "Ju Li"
    ],
    "authors_complete": true,
    "human_role_note": "These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.",
    "agents": [],
    "related": [],
    "subresults": [],
    "scientific_assessment": {
      "source_review": "SOURCE_CURATED",
      "scientific_review": "NOT_REVIEWED_BY_WRS",
      "formal_replay": "NOT_RUN",
      "provider_attestation": "NONE"
    },
    "sources": [
      {
        "id": "qian-liu-fu-li-1tprime-tmd-topology-2014-v1",
        "title": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
        "url": "https://arxiv.org/pdf/1406.2749v1",
        "date": "2014-06-11"
      }
    ],
    "points": "145000",
    "published_grade": {
      "id": "qian-liu-fu-li-1tprime-tmd-topological-phase-prediction-2014",
      "entry_id": "qian-liu-fu-li-1tprime-tmd-topological-phase-prediction-2014",
      "band": "A",
      "modifier": "+",
      "target": {
        "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
        "version": 1,
        "content_hash": "sha256:bbc6017fb55a0af2689f578075053c4939abd62c8ff30c0a8756b48900fd2eb7"
      },
      "what_changed": "Qian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels.",
      "scope": "Qian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels. This is a calculation and device proposal, not an experimentally built transistor or a universal room-temperature demonstration. In the cited v1, the computed MoTe₂ and WTe₂ bands overlap and are described as semimetallic; the authors proposed strain to lift the overlap. Inverted gaps at a specific momentum must not be confused with global fundamental insulating gaps. Predictions depend on structural, G₀W₀ and tight-binding approximations. The later WTe₂ short-edge transport measurement is a separate contribution; not all predicted compounds or device claims were thereby validated.",
      "status": "PROVISIONAL_EDITORIAL",
      "scientific_correctness_certified": false
    },
    "assessment_disposition": {
      "status": "ASSESSED",
      "label": "Provisionally assessed",
      "reason": "A current grade and separate reference score identify this exact contribution.",
      "target": {
        "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
        "version": 1,
        "content_hash": "sha256:bbc6017fb55a0af2689f578075053c4939abd62c8ff30c0a8756b48900fd2eb7"
      },
      "edition": "ratings-e039106f30dec177"
    }
  },
  "version": {
    "kind": "PUBLIC_RECORD_VIEW",
    "previous": null,
    "published_at": "2026-10-28T00:00:00Z",
    "publisher": {
      "principal_id": "urn:uuid:80116931-785b-40a2-a24b-9d59db0c7e33",
      "role": "WRS_EDITORIAL_PUBLICATION"
    },
    "record": {
      "contributors": [
        {
          "attribution_basis": "SOURCE_CITED",
          "credit": "historical_scientific",
          "entity_kind": "historical_person",
          "name": "Xiaofeng Qian",
          "note": "Archive attribution; detailed role assignment remains source-bound",
          "roles": [
            "formulator"
          ],
          "source": {
            "citation": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
            "url": "https://arxiv.org/pdf/1406.2749v1"
          }
        },
        {
          "attribution_basis": "SOURCE_CITED",
          "credit": "historical_scientific",
          "entity_kind": "historical_person",
          "name": "Junwei Liu",
          "note": "Archive attribution; detailed role assignment remains source-bound",
          "roles": [
            "formulator"
          ],
          "source": {
            "citation": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
            "url": "https://arxiv.org/pdf/1406.2749v1"
          }
        },
        {
          "attribution_basis": "SOURCE_CITED",
          "credit": "historical_scientific",
          "entity_kind": "historical_person",
          "name": "Liang Fu",
          "note": "Archive attribution; detailed role assignment remains source-bound",
          "roles": [
            "formulator"
          ],
          "source": {
            "citation": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
            "url": "https://arxiv.org/pdf/1406.2749v1"
          }
        },
        {
          "attribution_basis": "SOURCE_CITED",
          "credit": "historical_scientific",
          "entity_kind": "historical_person",
          "name": "Ju Li",
          "note": "Archive attribution; detailed role assignment remains source-bound",
          "roles": [
            "formulator"
          ],
          "source": {
            "citation": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
            "url": "https://arxiv.org/pdf/1406.2749v1"
          }
        }
      ],
      "evidence": [
        {
          "description": "Bibliographic/stated-result source; not a WRS proof verification",
          "id": "source-0",
          "kind": "source_reference",
          "source": {
            "citation": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
            "url": "https://arxiv.org/pdf/1406.2749v1"
          }
        }
      ],
      "origin": "HUMAN_LEGACY",
      "record_profile": "wrs-local-research-notes-0.1",
      "record_type": "research_note",
      "rrp_version": "0.1",
      "scope": {
        "description": "This is a calculation and device proposal, not an experimentally built transistor or a universal room-temperature demonstration. In the cited v1, the computed MoTe₂ and WTe₂ bands overlap and are described as semimetallic; the authors proposed strain to lift the overlap. Inverted gaps at a specific momentum must not be confused with global fundamental insulating gaps. Predictions depend on structural, G₀W₀ and tight-binding approximations. The later WTe₂ short-edge transport measurement is a separate contribution; not all predicted compounds or device claims were thereby validated.",
        "domain": "Condensed matter theory and topological materials"
      },
      "sources": [
        {
          "citation": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
          "url": "https://arxiv.org/pdf/1406.2749v1"
        }
      ],
      "statement": "# Predicted topological electronic phases in 1T′ transition-metal dichalcogenide monolayers\n\nQian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels.\n\n## Scientific scope\n\nThis is a calculation and device proposal, not an experimentally built transistor or a universal room-temperature demonstration. In the cited v1, the computed MoTe₂ and WTe₂ bands overlap and are described as semimetallic; the authors proposed strain to lift the overlap. Inverted gaps at a specific momentum must not be confused with global fundamental insulating gaps. Predictions depend on structural, G₀W₀ and tight-binding approximations. The later WTe₂ short-edge transport measurement is a separate contribution; not all predicted compounds or device claims were thereby validated.\n\n## Reading status\n\nThis is a source-linked WRS catalogue note. A full explanatory guide and independent scientific reconstruction have not been completed for this entry. Read the identified original work for its complete narrative and arguments.\n\n## People and systems\n\nXiaofeng Qian; Junwei Liu; Liang Fu; Ju Li\n\nThese are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged.\n\n\n\n## Original sources\n\n- [Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides](https://arxiv.org/pdf/1406.2749v1)\n",
      "summary": "Qian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels.",
      "title": "Predicted topological electronic phases in 1T′ transition-metal dichalcogenide monolayers"
    },
    "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
    "version": 1,
    "source_ref": {
      "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
      "version": 1,
      "content_hash": "sha256:bbc6017fb55a0af2689f578075053c4939abd62c8ff30c0a8756b48900fd2eb7"
    },
    "export_view": "wrs-public-editorial-view-1",
    "public_view_hash": "sha256:b76fa8d1efd94bc01ffe180438937aa145a749cd1612421191ccb1dbd90b8910"
  },
  "target": {
    "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
    "version": 1,
    "content_hash": "sha256:bbc6017fb55a0af2689f578075053c4939abd62c8ff30c0a8756b48900fd2eb7"
  },
  "published_grade": {
    "profile": "wrs-published-grade-1",
    "edition": "2026-10-28.1",
    "id": "qian-liu-fu-li-1tprime-tmd-topological-phase-prediction-2014",
    "entry_id": "qian-liu-fu-li-1tprime-tmd-topological-phase-prediction-2014",
    "revision": 1,
    "title": "Predicted topological electronic phases in 1T′ transition-metal dichalcogenide monolayers",
    "context": "Condensed matter theory and topological materials",
    "track": "Scoped theoretical result, model or research proposal",
    "band": "A",
    "modifier": "+",
    "status": "PROVISIONAL_EDITORIAL",
    "assessed_on": "2026-10-28",
    "evidence_cutoff": "2026-10-28",
    "achievement_state": "SUPPORTED_SCOPED_RESULT",
    "what_changed": "Qian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels.",
    "scope": "Qian, Liu, Fu and Li used first-principles electronic-structure and edge-state calculations to predict nontrivial band topology in six distorted 1T′ transition-metal dichalcogenide monolayers. They calculated a field-driven topological phase transition for monolayer MoS₂ and proposed a layered field-effect device exploiting the predicted edge channels. This is a calculation and device proposal, not an experimentally built transistor or a universal room-temperature demonstration. In the cited v1, the computed MoTe₂ and WTe₂ bands overlap and are described as semimetallic; the authors proposed strain to lift the overlap. Inverted gaps at a specific momentum must not be confused with global fundamental insulating gaps. Predictions depend on structural, G₀W₀ and tight-binding approximations. The later WTe₂ short-edge transport measurement is a separate contribution; not all predicted compounds or device claims were thereby validated.",
    "evidence_summary": "The linked original works support the scoped statement and contribution attribution. WRS has not independently replayed experiments or reconstructed a full mathematical proof. This is a calculation and device proposal, not an experimentally built transistor or a universal room-temperature demonstration. In the cited v1, the computed MoTe₂ and WTe₂ bands overlap and are described as semimetallic; the authors proposed strain to lift the overlap. Inverted gaps at a specific momentum must not be confused with global fundamental insulating gaps. Predictions depend on structural, G₀W₀ and tight-binding approximations. The later WTe₂ short-edge transport measurement is a separate contribution; not all predicted compounds or device claims were thereby validated.",
    "references": [
      {
        "title": "Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides",
        "url": "https://arxiv.org/pdf/1406.2749v1",
        "locator": "Original scoped contribution, statement/method and evidence limits; source-specific attribution retained."
      }
    ],
    "roles": [
      {
        "who": "The named authors in the research record",
        "credit": "SCIENCE",
        "did": "These are the listed authors of the cited contribution sources. Paper authorship does not quantify individual effort. An incomplete list is explicitly marked; same names are not automatically merged."
      }
    ],
    "target": {
      "record_id": "urn:uuid:b3e087f1-615e-4830-a540-50779273e78b",
      "version": 1,
      "content_hash": "sha256:bbc6017fb55a0af2689f578075053c4939abd62c8ff30c0a8756b48900fd2eb7"
    },
    "scientific_correctness_certified": false,
    "independent_expert_calibration": false,
    "method": "PROPRIETARY",
    "points": "145000"
  },
  "canonical_agent_submission": false,
  "scientific_verification_awarded": false,
  "reader_guide": null,
  "reading_status": "SOURCE_LINKED_NOTE"
}